Abstract: Taking the synthetic indium sulfide to simulate the actual one, the sulfuric acid leaching kinetics of indium sulfide at normal pressure were investigated by surveying the leaching rate of indium in different particle size, reaction temperature, acidity and different leaching time. The results indicated that the leaching process fit for Avrami equation as grain parameter was 0.576. It was jointly controlled by the diffusion and reaction of chemistry. Since the reaction of chemistry is fast, the diffusion reaction should be intensified to improve the leaching rate of indium.

Key words: Indium sulfide, Sulfuric acid leaching at normal pressure, Leaching kinetics, Avrami model